English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 4Mb (256K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 15 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-BSOJ (0.400", 10.16mm Width) |
| 供应商设备包: | 44-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V424S15PHGIRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IS43TR16256A-125KBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
CY7C1308DV25C-167BZCTRochester Electronics |
IC SRAM 9MBIT PARALLEL 165FBGA |
|
IS25WP032D-JKLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
CY7C1620KV18-300BZCRochester Electronics |
SYNC RAM |
|
IS45S16400J-7BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 54TFBGA |
|
R1LP5256ESP-5SR#B0Rochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOP |
|
70T3539MS166BCGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 256CABGA |
|
S29GL128S90TFI013Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
25LC128-E/STRoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 8TSSOP |
|
CY27C256A-45WCRochester Electronics |
UVPROM, 32KX8, 45NS |
|
S34ML01G200BHI000Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 63BGA |
|
04184ARLAC-5NRochester Electronics |
4MBIT (256K X 18) SRAM |
