类型 | 描述 |
---|---|
系列: | MoBL® |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 2.2V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1061G18-15ZSXITCypress Semiconductor |
IC SRAM 16MBIT PAR 54TSOP II |
|
CY7C1399BN-15VCRochester Electronics |
STANDARD SRAM, 32KX8, 15NS |
|
MX30LF2G28AC-TIMacronix |
IC FLASH 2GBIT PARALLEL 48TSOP |
|
GS8342DT37BGD-400IGSI Technology |
IC SRAM 36MBIT PARALLEL 165FPBGA |
|
AS7C34098A-15JCNAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
M24256-DRMF3TG/KSTMicroelectronics |
IC EEPROM 256KBIT I2C 1MHZ 8MLP |
|
AS1C512K16PL-70BINAlliance Memory, Inc. |
IC PSRAM 8MBIT PARALLEL 48FBGA |
|
BR93L76RF-WE2ROHM Semiconductor |
IC EEPROM 8KBIT SPI 2MHZ 8SOP |
|
IS42S16320F-7BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
70V631S12BFGI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 208FPBGA |
|
CY7C1354C-200AXCTRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
7140LA25PFG8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
W25Q32JVSTIQWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8VSOP |