English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MX30LF |
| 包裹: | Tray |
| 零件状态: | Not For New Designs |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND (SLC) |
| 内存大小: | 2Gb (256M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 20ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 48-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
GS8342DT37BGD-400IGSI Technology |
IC SRAM 36MBIT PARALLEL 165FPBGA |
|
AS7C34098A-15JCNAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
M24256-DRMF3TG/KSTMicroelectronics |
IC EEPROM 256KBIT I2C 1MHZ 8MLP |
|
AS1C512K16PL-70BINAlliance Memory, Inc. |
IC PSRAM 8MBIT PARALLEL 48FBGA |
|
BR93L76RF-WE2ROHM Semiconductor |
IC EEPROM 8KBIT SPI 2MHZ 8SOP |
|
IS42S16320F-7BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
70V631S12BFGI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 208FPBGA |
|
CY7C1354C-200AXCTRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
7140LA25PFG8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
W25Q32JVSTIQWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8VSOP |
|
IS42S32160F-75EBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
FM24VN10-GCypress Semiconductor |
IC FRAM 1MBIT I2C 3.4MHZ 8SOIC |
|
CY7C1570KV18-400BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
