English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 8Kb (1K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 35ns |
| 访问时间: | 35 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 52-QFP |
| 供应商设备包: | 52-PQFP (10x10) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT58L512L18PS-6Rochester Electronics |
IC SRAM 8MBIT PARALLEL 100TQFP |
|
CAT25020SI-TE13Rochester Electronics |
IC EEPROM 2KBIT SPI 10MHZ 8SOIC |
|
24AA08T-I/OTRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C SOT23-5 |
|
FM24V01-GRochester Electronics |
SERIAL FRAM MEMORY, 16KX8 PDSO8 |
|
STK11C68-5K55MRochester Electronics |
DUAL MARKED (5962-9232404MXA) |
|
FM93C86ALZM8Rochester Electronics |
EEPROM, 1KX16, SERIAL, CMOS |
|
CY62162G18-55BGXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 119PBGA |
|
71V65603ZS133PFRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CY7C1361C-133AJXCRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
PC28F512P30BFAFlip Electronics |
IC FLASH 512MBIT PAR 64EASYBGA |
|
GS81284Z36GB-250IGSI Technology |
IC SRAM 144MBIT PAR 119FPBGA |
|
IS61C6416AL-12KLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
24LC256-I/PRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8DIP |
