类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BQ4014MB-120Rochester Electronics |
IC NVSRAM 2MBIT PAR 32DIP MODULE |
|
CAT24C02VP2E-GT3Rochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8TDFN |
|
24LC025T-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
IS43DR86400D-3DBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TWBGA |
|
71024S20TYGRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
71V416L12PHGI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
71256SA25TPIRochester Electronics |
SRAM 256K (32K X 8-BIT) |
|
CYD02S36V18-200BBCRochester Electronics |
IC SRAM 2MBIT PARALLEL 256FBGA |
|
S29GL064S70TFI023Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
AT25640A-10TQ-2.7Rochester Electronics |
EEPROM, 8KX8, SERIAL, CMOS |
|
S29GL01GT13DHNV10Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
IS61WV10248BLL-10MLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48MINIBGA |
|
BR24T04F-WE2ROHM Semiconductor |
IC EEPROM 4K I2C 400KHZ 8SOP |