English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 4Kb (256 x 8 x 2) |
| 内存接口: | I²C |
| 时钟频率: | 1 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 350 ns |
| 电压 - 电源: | 1.7V ~ 3.6V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS42SM16320E-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
CY7C1069GN30-10BVXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
AT28C256E-15DM/883-815Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28CDIP |
|
BR93L76RFJ-WE2ROHM Semiconductor |
IC EEPROM 8KBIT SPI 2MHZ 8SOPJ |
|
S29GL01GS11TFIV13Rochester Electronics |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
AS7C4096A-20TCNTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
IS61LF51218A-7.5TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
DS2502X1Rochester Electronics |
IC EPROM 1KBIT 1-WIRE 4WLP |
|
AT27BV010-90JU-TRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32PLCC |
|
TE28F008B3T110Rochester Electronics |
FLASH, 1MX8, 110NS, PDSO40 |
|
SST26WF016BAT-104I/CSRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8CSP |
|
DS1258W-100INDRochester Electronics |
DS1258 3.3V 128K X 16 NV SRAM |
|
S25FS256SAGMFM001Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
