类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 8Kb (1K x 8, 512 x 16) |
内存接口: | SPI |
时钟频率: | 3 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SST26VF064BEUI-104I/MFRoving Networks / Microchip Technology |
IC FLASH 64MBIT SPI/QUAD 8WDFN |
|
93C46BX/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
24AA02E48T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
M48Z08-100PC1STMicroelectronics |
IC NVSRAM 64KBIT PAR 28PCDIP |
|
BR95320-WMN6TPROHM Semiconductor |
IC EEPROM 32KBIT SPI 5MHZ 8SO |
|
IS42S32400F-7TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
25AA02UIDT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI SOT23-6 |
|
IS64WV51216EDBLL-10BLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48MINIBGA |
|
CY7C1412KV18-250BZCTCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
NM24C65UNRochester Electronics |
IC EEPROM 64KBIT I2C 100KHZ 8DIP |
|
CY7C1361C-133AXITCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
25LC640AT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 10MHZ 8MSOP |
|
W988D6FBGX6I TRWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 54VFBGA |