English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 4Mb (256K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 20ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.65V ~ 2.2V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-TFBGA |
| 供应商设备包: | 48-TFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BR25H020FVT-2CE2ROHM Semiconductor |
IC EEPROM 2KBIT SPI 8TSSOPB |
|
11LC020-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SGL WIRE 8SOIC |
|
AT28C256-15TURoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28TSOP |
|
CAT24C16YI-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT I2C 8TSSOP |
|
AT45DB041E-MHN-TAdesto Technologies |
IC FLASH 4MBIT SPI 85MHZ 8UDFN |
|
6116LA45SOGRochester Electronics |
SRAM 16K (2K X 8-BIT) |
|
GS8662TT38BGD-500IGSI Technology |
IC SRAM 72MBIT PARALLEL 165FPBGA |
|
M95M01-DFMN6TPSTMicroelectronics |
IC EEPROM 1MBIT SPI 16MHZ 8SO |
|
IS43DR16640B-3DBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 84TWBGA |
|
IS43TR16640A-15GBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
BR24C04-WDW6TPROHM Semiconductor |
IC EEPROM 4K I2C 400KHZ 8TSSOP |
|
7164L20YGI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
71V35761SA200BGG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
