类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 8Mb (1M x 8) |
内存接口: | SPI - Quad I/O, QPI, DTR |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | 800µs |
访问时间: | - |
电压 - 电源: | 2.3V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1668KV18-550BZXCRochester Electronics |
IC SRAM 144MBIT PARALLEL 165FBGA |
|
24LC128T-E/SMRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8SOIJ |
|
CY7C1518KV18-250BZCRochester Electronics |
DDR SRAM, 4MX18, 0.45NS, CMOS, P |
|
S29AL016J70TFN013Rochester Electronics |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
CY7C1339A-100ACRochester Electronics |
128KX32 3.3V SYNC-PL SRAM (3.3V |
|
71V65703S80BQGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
BR93G56F-3BGTE2ROHM Semiconductor |
IC EEPROM 2KBIT SPI 3MHZ 8SOP |
|
NM27C010VE120Rochester Electronics |
IC EPROM 1MBIT PARALLEL 32PLCC |
|
IS42S32800J-75ETL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
SST39SF020A-70-4I-NHE-TRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
S-24C512CI-J8T1U4ABLIC U.S.A. Inc. |
IC EEPROM 512KBIT I2C 1MHZ 8SOP |
|
CY62147DV30LL-55ZSXIRochester Electronics |
STANDARD SRAM, 256KX16, 55NS |
|
AT28HC256-12SURoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28SOIC |