English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 32Kb (4K x 8) |
| 内存接口: | SPI |
| 时钟频率: | 1 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
| 供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RC28F128J3F75AFlip Electronics |
IC FLASH 128MBIT PAR 64EASYBGA |
|
7164L85TDBRochester Electronics |
IC SRAM 64KBIT PARALLEL 28CDIP |
|
IS43LR16160G-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
FM24C32ULZM8Rochester Electronics |
IC EEPROM 32KBIT I2C 8SOIC |
|
71V65803S133BGGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
7140LA100PDGRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 48DIP |
|
70T3509MS133BPRenesas Electronics America |
IC SRAM 36MBIT PARALLEL 256CABGA |
|
S25FL128SAGMFIG01Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
MT55L64L32F1T-12ITRochester Electronics |
ZBT SRAM, 64KX32, 9NS |
|
CY7C1314KV18-250BZXCRochester Electronics |
QDR SRAM, 512KX36, 0.45NS PBGA16 |
|
ACE1101NRochester Electronics |
8-BIT, EEPROM, ACE1101 CPU, 1MHZ |
|
CY7C1314BV18-250BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
93C46B-I/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
