类型 | 描述 |
---|---|
系列: | StrataFlash™ |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (16M x 8, 8M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 75ns |
访问时间: | 75 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-TBGA |
供应商设备包: | 64-EasyBGA (10x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7164L85TDBRochester Electronics |
IC SRAM 64KBIT PARALLEL 28CDIP |
|
IS43LR16160G-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
FM24C32ULZM8Rochester Electronics |
IC EEPROM 32KBIT I2C 8SOIC |
|
71V65803S133BGGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
7140LA100PDGRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 48DIP |
|
70T3509MS133BPRenesas Electronics America |
IC SRAM 36MBIT PARALLEL 256CABGA |
|
S25FL128SAGMFIG01Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
MT55L64L32F1T-12ITRochester Electronics |
ZBT SRAM, 64KX32, 9NS |
|
CY7C1314KV18-250BZXCRochester Electronics |
QDR SRAM, 512KX36, 0.45NS PBGA16 |
|
ACE1101NRochester Electronics |
8-BIT, EEPROM, ACE1101 CPU, 1MHZ |
|
CY7C1314BV18-250BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
93C46B-I/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
93LC66C-E/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8SOIC |