English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 256Kb (64K x 4) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 25ns |
| 访问时间: | 25 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 24-BSOJ (0.300", 7.62mm Width) |
| 供应商设备包: | 24-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
70V3389S5BCI8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |
|
71V2576S150PFGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
FM24C16UFLMT8Rochester Electronics |
IC EEPROM 16KBIT I2C 8TSSOP |
|
IS42S32160F-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
CAT25320VI-G-ONRochester Electronics |
IC EEPROM 32KBIT SPI 10MHZ 8SOIC |
|
CY14B104NA-BA45XETCypress Semiconductor |
IC NVSRAM 4MBIT PARALLEL 48FBGA |
|
CY7C1021L-15ZCRochester Electronics |
STANDARD SRAM, 64KX16, 15NS |
|
AT25010B-XHL-BRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 20MHZ 8TSSOP |
|
CY7C1170KV18-400BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
W632GU8NB-12Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
CY7C1357S-100AXCTRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
93LC86BT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
|
24LC04BT-E/SNGRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8SOIC |
