English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100, SST25 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | SPI |
| 时钟频率: | 40 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 2.3V ~ 3.6V |
| 工作温度: | -40°C ~ 105°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-WDFN Exposed Pad |
| 供应商设备包: | 8-WDFN (5x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V67602S166PFGRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
S25FL116K0XBHIS30Rochester Electronics |
IC FLASH 16MBIT SPI/QUAD 24BGA |
|
AS7C34098A-10JCNTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
GD25WD80CTIGGigaDevice |
IC FLASH 8MBIT SPI/QUAD I/O 8SOP |
|
BR93G66NUX-3TTRROHM Semiconductor |
IC EEPROM 4KBIT SPI VSON008X2030 |
|
IS61LPS102418B-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100LQFP |
|
S70GL02GS11FHA013Cypress Semiconductor |
IC FLASH 2GBIT PARALLEL 64FBGA |
|
GD25Q80CTIGGigaDevice |
IC FLASH 8MBIT SPI/QUAD I/O 8SOP |
|
SM662GXE BDS ST706Silicon Motion |
FERRI EMMC 80GB 3D TLC [PSEUDO-S |
|
UPD46185364BF1-E40Y-EQ1-ARochester Electronics |
QDR SRAM, 512KX36, 0.45NS |
|
MT58L512L18PS-10Rochester Electronics |
IC SRAM 8MBIT PARALLEL 100TQFP |
|
IS61NLF25618A-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS45S16320F-7BLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
