English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 4Kb (256 x 16) |
| 内存接口: | SPI |
| 时钟频率: | 3 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-UFDFN Exposed Pad |
| 供应商设备包: | VSON008X2030 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS61LPS102418B-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100LQFP |
|
S70GL02GS11FHA013Cypress Semiconductor |
IC FLASH 2GBIT PARALLEL 64FBGA |
|
GD25Q80CTIGGigaDevice |
IC FLASH 8MBIT SPI/QUAD I/O 8SOP |
|
SM662GXE BDS ST706Silicon Motion |
FERRI EMMC 80GB 3D TLC [PSEUDO-S |
|
UPD46185364BF1-E40Y-EQ1-ARochester Electronics |
QDR SRAM, 512KX36, 0.45NS |
|
MT58L512L18PS-10Rochester Electronics |
IC SRAM 8MBIT PARALLEL 100TQFP |
|
IS61NLF25618A-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS45S16320F-7BLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
S29GL01GT10TFI020Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
MT47H256M8EB-25E:C TRMicron Technology |
IC DRAM 2GBIT PARALLEL 60FBGA |
|
71V3577S80BGG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
AS4C1G8MD3L-12BCNAlliance Memory, Inc. |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
S25FL128SAGBHI310Rochester Electronics |
IC FLASH 128MBIT SPI/QUAD 24BGA |
