类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | - |
访问时间: | 8 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS4C1G8MD3L-12BCNAlliance Memory, Inc. |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
S25FL128SAGBHI310Rochester Electronics |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
CY62146GN30-45BVXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
S29GL512T10TFI023Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
CY7C1346F-166ACRochester Electronics |
CACHE SRAM, 64KX36, 3.5NS |
|
BR24T02F-WGE2ROHM Semiconductor |
IC EEPROM 2KBIT I2C 400KHZ 8SOP |
|
24CW1280T-I/CS1668Roving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 1MHZ 4CSP |
|
NDS36PT5-20ETInsignis Technology Corporation |
IC DRAM 256MBIT PAR 54TSOP II |
|
S25FL256SAGMFI001Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
71V416YS15YGRochester Electronics |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
W29GL512SL9BWinbond Electronics Corporation |
IC FLSH 512MBIT PARALLEL 64LFBGA |
|
AM27S45A/BKARochester Electronics |
AM27S45 - OTP ROM, 2KX8 |
|
S26KS256SDABHM030Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 24FBGA |