English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 8Kb (1K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 55ns |
| 访问时间: | 55 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -55°C ~ 125°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 48-DIP (0.600", 15.24mm) |
| 供应商设备包: | 48-SIDE BRAZED |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V67603S133BQG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
CY62146GE30-45ZSXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY7C1069GN30-10ZSXITCypress Semiconductor |
IC SRAM 16MBIT PAR 54TSOP II |
|
GS8662D18BGD-400IGSI Technology |
IC SRAM 72MBIT PARALLEL 165FPBGA |
|
93LC46AT-I/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
IS42S32800J-7TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
CY14B101L-SP35XCRochester Electronics |
IC NVSRAM 1MBIT PARALLEL 48SSOP |
|
71256L100TDBRochester Electronics |
IC SRAM 256KBIT PARALLEL 28CDIP |
|
BR25H080F-WCE2ROHM Semiconductor |
IC EEPROM 8KBIT SPI 5MHZ 8SOP |
|
IS42S32200L-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
CAT64LC40WIRochester Electronics |
IC EEPROM 4KBIT SPI 1MHZ 8SOIC |
|
70V05L15JG8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
71V65603S100PFGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
