English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 9Mb (512K x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 150 MHz |
| 写周期时间 - 字，页: | 6.7ns |
| 访问时间: | 3.8 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AS7C3513B-12TCNAlliance Memory, Inc. |
IC SRAM 512KBIT PARALLEL 44TSOP2 |
|
S29GL128S10DHI020Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
AT24CS02-XHM-BRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP |
|
7005L15JGRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
24LC64T-I/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8TSSOP |
|
SST39VF040-70-4I-NHERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
BR24G04FVJ-3GTE2ROHM Semiconductor |
IC EEPROM 4KBIT I2C 8TSSOP |
|
AS4C64M8D1-5BCNTRAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
93LC66B-I/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8MSOP |
|
AT25PE20-SSHN-TAdesto Technologies |
IC FLASH 2MBIT SPI 85MHZ 8SOIC |
|
MT58V512V36FT-7.5Rochester Electronics |
CACHE SRAM, 512KX36, 7.5NS PQFP1 |
|
S25FL032P0XBHIS30Flip Electronics |
IC FLASH 32MBIT SPI/QUAD 24BGA |
|
71V546S133PFIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
