类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-BSOJ (0.400", 10.16mm Width) |
供应商设备包: | 32-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S29GL064S80FHV030Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
GS82564Z36GB-200IVGSI Technology |
IC SRAM 288MBIT PAR 119FPBGA |
|
AS7C32098A-10TINTRAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 44TSOP2 |
|
AT24CSW080-UUM0B-TRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 1MHZ 4WLCSP |
|
CYD02S18V-133BBCRochester Electronics |
DUAL-PORT SRAM, 128KX18 |
|
AT25DF021A-SSHN-TAdesto Technologies |
IC FLASH 2MBIT SPI 104MHZ 8SOIC |
|
S34ML01G200TFI000Rochester Electronics |
FLASH, 128MX8, 25NS, PDSO48 |
|
MT29F4G08ABAEAH4-ITS:EMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
71V67803S133PFIRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CAT25020YI-GRochester Electronics |
IC EEPROM 2KBIT SPI 20MHZ 8TSSOP |
|
24LC256-E/SMRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8SOIJ |
|
GD25LQ40CTIGGigaDevice |
IC FLASH 4MBIT SPI/QUAD I/O 8SOP |
|
AT28C64B-15JURoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 32PLCC |