English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 128Mb (8M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5.4 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 54-TFBGA |
| 供应商设备包: | 54-TFBGA (8x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NM93C56ANRochester Electronics |
EEPROM, 128X16, SERIAL PDIP8 |
|
FM28V102A-TGTRCypress Semiconductor |
IC FRAM 1MBIT PARALLEL 44TSOP II |
|
CY7C128A-15VCRochester Electronics |
IC SRAM 16KBIT PARALLEL 24SOJ |
|
S25FL164K0XMFB000Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
HM1-6516-9Rochester Electronics |
STANDARD SRAM, 2KX8, 200NS, CMOS |
|
MT25QL512ABB8ESF-0AAT TRMicron Technology |
IC FLASH 512MBIT SPI 133MHZ 16SO |
|
IS61WV25616BLL-10BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48MINIBGA |
|
CY7C1470BV33-200AXCCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 100TQFP |
|
M95256-WMN6TPSTMicroelectronics |
IC EEPROM 256KBIT SPI 20MHZ 8SO |
|
S26KL512SDABHB030Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 24FBGA |
|
CAT24C512WI-GRochester Electronics |
IC EEPROM 512KBIT I2C 1MHZ 8SOIC |
|
IS43LR16320B-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
24LC32AF-E/STRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8TSSOP |
