类型 | 描述 |
---|---|
系列: | GL-T |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (64M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 100 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S27KL0643DPBHB020Cypress Semiconductor |
IC PSRAM 64MBIT SPI/OCTAL 24FBGA |
|
MT29F4G08ABADAWP:D TRMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
CY7C1370SV25-167AXCRochester Electronics |
ZBT SRAM, 512KX36, 3.4NS PQFP100 |
|
IS65WV102416DBLL-55CTLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
AS7C34096A-20TCNAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
34AA02T-I/OTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C SOT23-6 |
|
SST38VF6404BT-70I/TVRoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
MT48LC16M16A2B4-6A IT:GMicron Technology |
IC DRAM 256MBIT PARALLEL 54VFBGA |
|
IS43TR82560CL-15HBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 78TWBGA |
|
IS25WP128-RHLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLSH 128MBIT SPI/QUAD 24TFBGA |
|
CY7C185-20VCRochester Electronics |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
71V65703S85BQIRochester Electronics |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
MT44K16M36RB-093E:B TRMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |