类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Not For New Designs |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 700 ps |
电压 - 电源: | 2.3V ~ 2.7V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 60-TFBGA |
供应商设备包: | 60-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS45S16320D-7TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
W25Q32JWSSIQ TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
S25FS128SAGMFI103Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
IS62WV6416BLL-55TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
24LC32A-E/STRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8TSSOP |
|
D2764A-2Rochester Electronics |
UVPROM, 8KX8, 200NS, MOS, CDIP28 |
|
CY7C1009BN-15VITRochester Electronics |
STANDARD SRAM, 128KX8 |
|
TN28F020-150Rochester Electronics |
EEPROM |
|
AT24C02B-TH-TRochester Electronics |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP |
|
AS7C31024B-20TJCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
CY7C1413JV18-300BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
GS8342QT19BGD-333IGSI Technology |
IC SRAM 36MBIT PARALLEL 165FPBGA |
|
CAT25C08Y-TE13Rochester Electronics |
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP |