English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 8Mb (1M x 8) |
| 内存接口: | SPI - Dual I/O |
| 时钟频率: | 50 MHz |
| 写周期时间 - 字，页: | 60µs, 6ms |
| 访问时间: | - |
| 电压 - 电源: | 1.65V ~ 2V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S25FL128LAGBHI030Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
CY7C1363B-117BGCRochester Electronics |
CACHE SRAM, 512KX18, 7.5NS |
|
S29AL016J55TFNR20Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
IS25LQ010B-JBLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 1MBIT SPI/QUAD 8SOIC |
|
NM24C02ULEM8XRochester Electronics |
IC EEPROM 2KBIT I2C 100KHZ 8SO |
|
IS46DR16320E-25DBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
CAT24AA16TDI-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT I2C TSOT23-5 |
|
93LC86CT-I/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8TSSOP |
|
70V3319S133BFRenesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
M24C64-WMN6TPSTMicroelectronics |
IC EEPROM 64KBIT I2C 1MHZ 8SO |
|
IS45S32400F-6BLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
AT24C04C-SSHM-BRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8SOIC |
|
MT25QU512ABB8ESF-0AAT TRMicron Technology |
IC FLASH 512MBIT SPI 133MHZ 16SO |
