类型 | 描述 |
---|---|
系列: | MoBL® |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-SOIC (0.445", 11.30mm Width) |
供应商设备包: | 32-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
23A640-I/PRoving Networks / Microchip Technology |
IC SRAM 64KBIT SPI 20MHZ 8DIP |
|
SST39VF1602-70-4I-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TFBGA |
|
MT54W2MH8JF-5Rochester Electronics |
IC SRAM 16MBIT PARALLEL 165FBGA |
|
MT29F1G08ABBFAH4-ITE:F TRMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
S25FL512SAGBHV310Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
IS61NVP204818B-200TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 100LQFP |
|
70V3589S166BCGRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 256CABGA |
|
24AA00/SNRoving Networks / Microchip Technology |
IC EEPROM 128B I2C 400KHZ 8SOIC |
|
24LC32A-E/PRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 400KHZ 8DIP |
|
71V416S15PHGRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IS42S32400F-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
S25FL256LDPBHV023Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
CY7C1069G30-10ZSXITCypress Semiconductor |
IC SRAM 16MBIT PAR 54TSOP II |