类型 | 描述 |
---|---|
系列: | FL-S |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (64M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 16-SOIC (0.295", 7.50mm Width) |
供应商设备包: | 16-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS4C64M16D3LB-12BCNAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
GD25VQ80CSIGRGigaDevice |
IC FLASH 8MBIT SPI/QUAD I/O 8SOP |
|
70T3339S133BCRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
CAT93C56YI-GRochester Electronics |
IC EEPROM 2KBIT SPI 2MHZ 8TSSOP |
|
71V67803S133PFG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
24LC128-E/SMRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8SOIJ |
|
23LCV1024-I/PRoving Networks / Microchip Technology |
IC SRAM 1MBIT SPI/DUAL I/O 8DIP |
|
S25FL512SAGBHVC10Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
AS6C1616-70BINTRAlliance Memory, Inc. |
IC SRAM 16MBIT PARALLEL 48TFBGA |
|
SST39VF3202B-70-4C-EKERoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
CY7C10212CV33-12BAXETCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 48FBGA |
|
CY15B128J-SXARochester Electronics |
IC FRAM 128KBIT I2C 3.4MHZ 8SOIC |
|
CY7C1512KV18-333BZXCRochester Electronics |
QDR SRAM, 4MX18, 0.45NS PBGA165 |