类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (128 x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.6V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.173", 4.40mm Width) |
供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS43DR16320E-25DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
CY7C09389V-6AXCRochester Electronics |
IC SRAM 1.152MBIT PAR 100TQFP |
|
93LC46A-E/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
SST25VF080B-50-4I-S2AF-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 50MHZ 8SOIC |
|
S29GL512T11DHV023Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
BR24G02FVT-3AGE2ROHM Semiconductor |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOPB |
|
TMS55166-60DGHRochester Electronics |
VIDEO DRAM, 256KX16, 60NS PDSO64 |
|
CY7C1041BV33-20VCTRochester Electronics |
STANDARD SRAM, 256KX16, 20NS |
|
AS4C64M8D3L-12BCNAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 78FBGA |
|
FM24C64FLM8Rochester Electronics |
IC EEPROM 64KBIT I2C 8SOIC |
|
DS28DG02G-3C+Rochester Electronics |
IC EEPROM 2KBIT SPI 2MHZ 36TQFN |
|
71T75802S133BGIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
CY14B116L-Z45XITCypress Semiconductor |
IC NVSRAM 16MBIT PAR 48TSOP I |