English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 32Kb (4K x 8) |
| 内存接口: | I²C |
| 时钟频率: | 1 MHz |
| 写周期时间 - 字，页: | 4ms |
| 访问时间: | 450 ns |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | -40°C ~ 105°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT58L64L32DT-7.5TRRochester Electronics |
CACHE SRAM, 64KX32, 4NS |
|
MT48LC8M16A2TG-6A:LAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 54TSOP II |
|
IS42S16800F-7BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
CY7C1355C-133BGXCRochester Electronics |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
NDL28PFH-9METInsignis Technology Corporation |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
CY7C1570KV18-500BZCRochester Electronics |
DDR SRAM, 2MX36, 0.45NS, CMOS, P |
|
24LC00-I/SNRoving Networks / Microchip Technology |
IC EEPROM 128B I2C 400KHZ 8SOIC |
|
AT24C16C-XHM-BRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8TSSOP |
|
5962-8687505XARenesas Electronics America |
IC SRAM 8K PARALLEL SB48 |
|
IS25LP080D-JNLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 8MBIT SPI/QUAD 8SOIC |
|
TC58BYG1S3HBAI6Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 2GBIT PARALLEL 67VFBGA |
|
CY7C1441KV33-133BZXICypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
71T75802S150PFGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
