类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Kb (64K x 8) |
内存接口: | SPI - Dual I/O |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | 50µs, 4ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-XFDFN Exposed Pad |
供应商设备包: | 8-USON (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS49NLC96400A-25WBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144TWBGA |
|
93LC46BT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8MSOP |
|
93LC56X-I/SNRochester Electronics |
IC EEPROM 2KBIT MICROWIRE 8SOIC |
|
93C46AXT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
70T3339S200BCRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
71V256SA10PZRochester Electronics |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
S27KL0641DABHI033Cypress Semiconductor |
IC PSRAM 64MBIT PARALLEL 24FBGA |
|
7164L100DBRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28CERDIP |
|
71V3558SA100BQGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
S29GL256S10GHIV20Rochester Electronics |
IC FLASH 256MBIT PARALLEL 56FBGA |
|
BR24L01AFVM-WTRROHM Semiconductor |
IC EEPROM 1KBIT I2C 400KHZ 8MSOP |
|
MT48LC4M32B2B5-6A AAT:L TRMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
UPD44644182AF5-E40-FQ1-ARochester Electronics |
DDR SRAM, 4MX18, 0.45NS |