类型 | 描述 |
---|---|
系列: | HyperRAM™ KL |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | PSRAM |
技术: | PSRAM (Pseudo SRAM) |
内存大小: | 128Mb (16M x 8) |
内存接口: | Parallel |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | - |
访问时间: | 40 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-VBGA |
供应商设备包: | 24-FBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
R1LP0408CSP-5SI#B0Rochester Electronics |
IC SRAM 4MBIT PARALLEL 32SOP |
|
FM93C56LM8Rochester Electronics |
EEPROM, 128X16, SERIAL, CMOS |
|
NM93C56LNRochester Electronics |
IC EEPROM 2KBIT SPI 250KHZ 8DIP |
|
CY7C1512V18-200BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
25LC020A-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ 8TSSOP |
|
70V7519S133BC8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
CY62128EV30LL-45ZAXARochester Electronics |
IC SRAM 1MBIT PARALLEL 32STSOP |
|
25LC512-I/MFRoving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 20MHZ 8DFN |
|
RMLV0808BGSB-4S2#AA0Renesas Electronics America |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
S26KS512SDABHM030Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 24FBGA |
|
24FC16T-I/MUYRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8UDFN |
|
AT45DB021E-MHN-YAdesto Technologies |
IC FLASH 2MBIT SPI 70MHZ 8UDFN |
|
CAT25020SIRochester Electronics |
IC EEPROM 2KBIT SPI 10MHZ 8SOIC |