类型 | 描述 |
---|---|
系列: | MoBL® |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 8Mb (512K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 2.2V ~ 3.6V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 48-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70T3319S133BFRenesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
M48Z58Y-70PC1STMicroelectronics |
IC NVSRAM 64KBIT PAR 28PCDIP |
|
70T651S10BFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208FPBGA |
|
CY7C144E-15JXIRochester Electronics |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
CY7C1049BV33-12VITRochester Electronics |
STANDARD SRAM, 512KX8, 12NS |
|
PC28F512P33BFDAlliance Memory, Inc. |
IC FLASH 512MBIT PARALLEL 64LBGA |
|
S25FL256SDPMFV003Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
AT25XE011-SSHN-TAdesto Technologies |
IC FLASH 1MBIT SPI 104MHZ 8SOIC |
|
6116SA70DBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24CDIP |
|
MT29F2G08ABAEAWP-AATX:E TRMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
CY7C1665KV18-450BZXCRochester Electronics |
IC SRAM 144MBIT PARALLEL 165FBGA |
|
R1EX25004ASA00A#S0Rochester Electronics |
IC EEPROM 4KBIT SPI 5MHZ 8SOP |
|
CAT24C512YI-GRochester Electronics |
IC EEPROM 512KBIT I2C 8TSSOP |