English
简体中文
CAP CER 100PF 50V C0G/NP0 0805
CAP CER 0.15UF 16V X7R 1206
IC DRAM 512MBIT PARALLEL 84TWBGA
RELAY RF 3GHZ SPDT 500MA 3V
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Not For New Designs |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR2 |
| 内存大小: | 512Mb (32M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 400 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 400 ps |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 84-TFBGA |
| 供应商设备包: | 84-TWBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS45S16800F-6TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
MT25QU512ABB1EW9-0SIT TRMicron Technology |
IC FLASH 512MBIT SPI 8WPDFN |
|
IS64LPS102436B-166TQLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 100LQFP |
|
7009L20PFGIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
24LC128T-E/MSRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8MSOP |
|
25LC160T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 2MHZ 8SOIC |
|
25LC080AT-E/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP |
|
24AA02T-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
CY62147G30-55ZSXETCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
S29GL256S10TFV013Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
IS42S16160G-7BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
CY7C1415AV18-200BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
CY14ME064Q2B-SXIRochester Electronics |
IC NVSRAM 64KBIT SPI 40MHZ 8SOIC |