English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 10ms |
| 访问时间: | 120 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -55°C ~ 125°C (TC) |
| 安装类型: | Through Hole |
| 包/箱: | 30-BCPGA |
| 供应商设备包: | 30-CPGA (16.51x13.97) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY62256VLL-70ZXCRochester Electronics |
IC SRAM 256KBIT PAR 28TSOP I |
|
71342LA20PFG8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 64TQFP |
|
93C66AT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8TDFN |
|
IS43LD16640C-18BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 134TFBGA |
|
IS45S16320D-7CTLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
MT25QU01GBBB8E12-0AUTMicron Technology |
IC FLSH 1GBIT SPI 133MHZ 24TPBGA |
|
CY62157DV18L-70BVIRochester Electronics |
STANDARD SRAM, 512KX16, 70NS |
|
S29GL128P10TFI023Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
IS43LD32640B-18BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 134TFBGA |
|
71V3556SA133BGGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
CY7C1041G-10VXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
DS28EC20P+TMaxim Integrated |
IC EEPROM 20KBIT 1-WIRE 6TSOC |
|
25LC256-M/MFRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 10MHZ 8DFN |
