类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 9Mb (256K x 36) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.1 ns |
电压 - 电源: | 2.375V ~ 2.625V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY62167EV30LL-45BVXARochester Electronics |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
NM93C46AENRochester Electronics |
EEPROM, 64X16, SERIAL PDIP8 |
|
CY62126EV30LL-45BVXITRochester Electronics |
IC SRAM 1MBIT PARALLEL 48VFBGA |
|
CY7C251-65DMBRochester Electronics |
OTP ROM, 16KX8, 65NS |
|
CAT24C02WI-GT3ARochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
SMJ4161-15JDSRochester Electronics |
VIDEO DRAM, 64KX1, 150NS, NMOS |
|
CAT93C66VE-GT3Rochester Electronics |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
IS43LR16200D-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 32MBIT PARALLEL 60TFBGA |
|
S25FL128SDSBHI213Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
IS45S16320F-7TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
M24C16-FMH6TGSTMicroelectronics |
IC EEPROM 16KBIT I2C 5UFDFPN |
|
CY7C1021BN-12ZXCRochester Electronics |
STANDARD SRAM, 64KX16, 12NS PDSO |
|
DS2431X-S+Maxim Integrated |
IC EEPROM 1KBIT 1-WIRE 6UCSPR |