English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 256Mb (32M x 8) |
| 内存接口: | SPI |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | 8ms, 2.8ms |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 105°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 16-SOIC (0.295", 7.50mm Width) |
| 供应商设备包: | 16-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
W948D6KBHX5IWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 60VFBGA |
|
MT46H128M16LFDD-48 WT:C TRMicron Technology |
IC DRAM 2GBIT PARALLEL 60VFBGA |
|
S25FL256SDPBHBC03Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
5962-9459901MXARochester Electronics |
DUAL MARKED (STK12C68-5K55M) |
|
71V65803S133BQGRochester Electronics |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
0436A46QLAB-5Rochester Electronics |
4MBIT (128K X 36) SRAM |
|
S25FL256LAGNFN013Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
CY7C1061GE18-15BV1XITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
CY7C1545KV18-400BZXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IS43DR82560C-3DBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 60TWBGA |
|
S29GL01GP12TFI023Rochester Electronics |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
CAT25512HU5E-GT3Rochester Electronics |
EEPROM, 64KX8, SERIAL, CMOS, PDS |
|
IS42RM32160E-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
