类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 288Kb (32K x 9) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 7.5 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S-93L66AD0I-I8T1UABLIC U.S.A. Inc. |
IC EEPROM 4KBIT SPI 2MHZ SNT8A |
|
S25FL256LAGNFN011Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
FT24C04A-KLR-TFremont Micro Devices |
IC EEPROM 4KBIT I2C 1MHZ SOT23-5 |
|
CY62128BLL-70ZAERochester Electronics |
STANDARD SRAM, 128KX8 |
|
71016S15PHGIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
M95M02-DRMN6TPSTMicroelectronics |
IC EEPROM 2MBIT SPI 5MHZ 8SO |
|
24C65-I/SMRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIJ |
|
71V65603S133BGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
7130LA55CRenesas Electronics America |
IC SRAM 8KBIT PARALLEL SB48 |
|
JS28F128J3F75AAlliance Memory, Inc. |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
93L422/BWAJCRochester Electronics |
STANDARD SRAM, 256X4, 75NS, TTL, |
|
71V67603S133BGGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
24LC512T-E/SMRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIJ |