English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR2 |
| 内存大小: | 512Mb (64M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 333 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 450 ns |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 60-TFBGA |
| 供应商设备包: | 60-TWBGA (8x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V424L10PHGI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
SST39VF1601-70-4I-EKE-TRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
24LC00T/STRoving Networks / Microchip Technology |
IC EEPROM 128B I2C 400KHZ 8TSSOP |
|
S-24C16DI-K8T3U5ABLIC U.S.A. Inc. |
IC EEPROM 16KBIT I2C 1MHZ 8TMSOP |
|
70T633S12BFIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
AS7C34098A-12TINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
23LCV512-I/PRoving Networks / Microchip Technology |
IC SRAM 512KBIT SPI/DUAL 8DIP |
|
FM25C040UNRochester Electronics |
EEPROM, 512X8, SERIAL PDIP8 |
|
MT58L256L32DS-6Rochester Electronics |
CACHE SRAM, 256KX32, 3.5NS PQFP1 |
|
MT58V512V36FF-7.5Rochester Electronics |
CACHE SRAM, 512KX36, 7.5NS, CMOS |
|
IS43LD32640B-18BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 134TFBGA |
|
AS6C4008-55BINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 36TFBGA |
|
CY14B101KA-SP45XITCypress Semiconductor |
IC NVSRAM 1MBIT PARALLEL 48SSOP |
