类型 | 描述 |
---|---|
系列: | NoBL™ |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 72Mb (1M x 72) |
内存接口: | Parallel |
时钟频率: | 167 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.4 ns |
电压 - 电源: | 2.375V ~ 2.625V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 209-BGA |
供应商设备包: | 209-FBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7054L20PRFGRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 128TQFP |
|
71V3558SA166BQGI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
IS64WV10248EDBLL-10BLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48TFBGA |
|
S27KL0642DPBHV020Cypress Semiconductor |
IC PSRAM 64MBIT HYPERBUS 24FBGA |
|
GS8640Z36GT-250IVGSI Technology |
IC SRAM 72MBIT PARALLEL 100TQFP |
|
S29GL032N90TFA023Rochester Electronics |
FLASH, 2MX16, 90NS, PDSO56 |
|
93C56-I/SMRochester Electronics |
256 X 8 SERIAL EEPROM |
|
71V016SA12BFGI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 48FBGA |
|
S25FL128SAGMFB001Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
MT28EW01GABA1HJS-0SIT TRMicron Technology |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
EM6HC08EWUG-10HEtron Technology |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
CY7C109V33-25VCRochester Electronics |
STANDARD SRAM, 128KX8 |
|
CY14B104N-BA20XCRochester Electronics |
IC NVSRAM 4MBIT PARALLEL 48FBGA |