类型 | 描述 |
---|---|
系列: | MXSMIO™ |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 8Mb (1M x 8) |
内存接口: | SPI |
时钟频率: | 104 MHz |
写周期时间 - 字,页: | 100µs, 4ms |
访问时间: | - |
电压 - 电源: | 2.3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61NVP51236B-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100LQFP |
|
BR24A04F-WLBH2ROHM Semiconductor |
IC EEPROM 4KBIT I2C 400KHZ 8SOP |
|
47L04-I/SNRoving Networks / Microchip Technology |
IC EERAM 4KBIT I2C 1MHZ 8SOIC |
|
71V3556SA100BGG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IS61C1024AL-12JLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
AT25XE081D-MAHN-TAdesto Technologies |
IC FLASH 8MBIT SPI/QUAD 8USON |
|
CY7C1562XV18-450BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CY7C1061GE30-10ZSXICypress Semiconductor |
IC SRAM 16MBIT PAR 54TSOP II |
|
W632GU6NB-12Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
IS43LR32160C-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
CY7C1019CV33-12BVIRochester Electronics |
STANDARD SRAM, 128KX8 |
|
FEMC004GTTG7-T24-16Flexxon |
IC FLASH 32GBIT EMMC 100FBGA |
|
IS42S16320F-7TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |