类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | DRAM |
内存大小: | 576Mb (16M x 36) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | - |
访问时间: | 10 ns |
电压 - 电源: | 1.28V ~ 1.42V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 168-LBGA |
供应商设备包: | 168-FC(LF)BGA (13.5x13.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MX29LV400CTTC-70GMacronix |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
CAT28C64BT13I-15TRochester Electronics |
IC EEPROM 64KBIT PARALLEL 28TSOP |
|
CY62157ESL-45ZSXICypress Semiconductor |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
7134LA25JGIRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
CY7C1021CV33-12VCTRochester Electronics |
STANDARD SRAM, 64KX16 |
|
AT25DF256-XMHN-BAdesto Technologies |
IC FLASH 256KBIT SPI 8TSSOP |
|
S25FS256SDSMFI003Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
24AA025E64T-I/OTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C SOT23-6 |
|
CAT34C02YI-GT5ARochester Electronics |
CAT34C02 - 2-KBIT I2C SERIAL EEP |
|
MB85RC256VPNF-G-JNERE1Fujitsu Electronics America, Inc. |
IC FRAM 256KBIT I2C 1MHZ 8SOP |
|
71V2556S133BGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MT48LC4M32B2P-6A XIT:L TRMicron Technology |
IC DRAM 128MBIT PAR 86TSOP II |
|
MT29F512G08EBHBFJ4-R:BMicron Technology |
IC FLASH NAND 512G PAR 132VBGA |