类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (128 x 8) |
内存接口: | Single Wire |
时钟频率: | 100 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
供应商设备包: | 8-MSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S-25C080A0I-J8T1GABLIC U.S.A. Inc. |
IC EEPROM 8KBIT SPI 5MHZ 8SOP |
|
CY7C1420UV18-300BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
MT29F1G08ABAFAWP-AATES:FMicron Technology |
IC FLASH 1GBIT PARALLEL 48TSOP I |
|
AT25080B-XHL-BRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 20MHZ 8TSSOP |
|
SST39VF3201-70-4C-EKERoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
24LC04B/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8SOIC |
|
GD25VE40CTIGGigaDevice |
IC FLASH 4MBIT SPI/QUAD I/O 8SOP |
|
IS61WV25616EDBLL-10TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CAT28LV64G25Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 32PLCC |
|
23LC1024T-I/STRoving Networks / Microchip Technology |
IC SRAM 1MBIT SPI/QUAD 8TSSOP |
|
71V416S10PHRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
MT41K64M16TW-107 AAT:JMicron Technology |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
34LC02T-E/OTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ SOT23-6 |