English
简体中文
IC SRAM 36MBIT PARALLEL 165FBGA
PLS GREEN MAGNETIC REFLECTIVE TA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, DDR II+ |
| 内存大小: | 36Mb (2M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 600 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BU9890GUL-WE2ROHM Semiconductor |
IC EEPROM 32KBIT I2C VCSP50L1 |
|
IS43DR16160B-3DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 84TWBGA |
|
71V3576S150PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MX25R8035FM2IL0Macronix |
IC FLASH 8MBIT SPI/QUAD I/O 8SOP |
|
IS43R16160F-5TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
CY62168G30-45BVXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
70T3319S200BCRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
S25FL512SDSBHV210Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
24LC014H-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 1MHZ 8MSOP |
|
S27KS0641DPBHB020Rochester Electronics |
PARALLEL NOR HYPERFLASH, 64MB (8 |
|
M34E02-FDW1TPSTMicroelectronics |
IC EEPROM 2KBIT I2C 8TSSOP |
|
24AA1025T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 400KHZ 8SOIC |
|
25LC512-E/SMRoving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 8SOIJ |