类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.7V ~ 3.6V |
工作温度: | -20°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-UFDFN Exposed Pad |
供应商设备包: | 8-UDFN (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS42S16320F-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
BU99901GUZ-WE2ROHM Semiconductor |
IC EEPROM 32KBIT I2C VCSP30L1 |
|
71V416L12BEGI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
71256L20YGI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
CAT24C04WI-GT3JNRochester Electronics |
IC EEPROM 4KBIT I2C 400KHZ 8SOIC |
|
CY7C2265KV18-450BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
CY7C1423AV18-167BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
CY7C1361C-133AXCTCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AS4C512M8D4-83BCNAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
CY7C1021CV33-8VXCRochester Electronics |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
QS8888-15PRochester Electronics |
CACHE TAG SRAM, 16KX4, 15NS |
|
AS7C34098A-20JCNAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
S34ML04G104BHI010Rochester Electronics |
IC FLASH 4GBIT PARALLEL 63BGA |