English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | DRAM |
| 内存大小: | 288Mb (8M x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 300 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 144-TBGA |
| 供应商设备包: | 144-TWBGA (11x18.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1415TV18-167BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
71V67602S133PFGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
PC28F256M29EWHAFlip Electronics |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
UPD44325182BF5-E40-FQ1Rochester Electronics |
QDR SRAM, 2MX18, 0.45NS |
|
FEMC016GTTE7-T13-16Flexxon |
IC FLASH 128GBIT EMMC 100FBGA |
|
CY14MB064Q2A-SXIRochester Electronics |
IC NVSRAM 64KBIT SPI 40MHZ 8SOIC |
|
MT55L256V32PT-6Rochester Electronics |
ZBT SRAM, 256KX32, 3.5NS PQFP100 |
|
24VL014H/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 8TSSOP |
|
71V3577S80BGIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
AT25XE321D-SSHN-TAdesto Technologies |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
UPD46184095BF1-E40-EQ1-ARochester Electronics |
DDR SRAM, 2MX9, 0.45NS |
|
IS25WP128F-JKLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
CY15B102N-ZS60XATCypress Semiconductor |
IC FRAM 2MBIT PARALLEL 44TSOP II |
