类型 | 描述 |
---|---|
系列: | GL-S |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 1Gb (64M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 110 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | 0°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BR25G512FJ-3GE2ROHM Semiconductor |
IC EEPROM 512KBIT SPI 8SOPJ |
|
CAT93C56VRochester Electronics |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
S29GL01GS10FHSS30Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
MT40A4G4NRE-083E:B TRMicron Technology |
IC DRAM 16GBIT PARALLEL 78FBGA |
|
FT93C56A-UTR-BFremont Micro Devices |
IC EEPROM 2KBIT SPI 2MHZ 8TSSOP |
|
BR25G128FJ-3GE2ROHM Semiconductor |
IC EEPROM 128KBIT SPI 8SOPJ |
|
11LC161-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SGL WIRE 8SOIC |
|
GS1561-CFRochester Electronics |
SRAM |
|
MT49H32M18CSJ-18:B TRMicron Technology |
IC DRAM 576MBIT PARALLEL 144FBGA |
|
IS61QDP2B42M36A-400M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
|
M24C02-DRDW3TP/KSTMicroelectronics |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP |
|
BR24C08-WDS6TPROHM Semiconductor |
IC EEPROM 8KBIT I2C 8TSSOP |
|
IS61LV5128AL-10TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |