English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 2Kb (256 x 8) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 900 ns |
| 电压 - 电源: | 1.7V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-VFDFN Exposed Pad |
| 供应商设备包: | 8-DFN (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
W971GG6SB25IWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 84WBGA |
|
IS45S16800F-7CTLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
IS61WV25616BLL-10TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
S29GL128S10FHI020Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
34LC02-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP |
|
11AA010T-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SGL WIRE 8TDFN |
|
IS42S16800F-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
CY7C1041CV33-10BAXIRochester Electronics |
STANDARD SRAM, 256KX16 |
|
CY7C1414SV18-167BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
70V3589S166BFRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 208CABGA |
|
24FC04HT-E/OTRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ SOT23-5 |
|
EM6HD08EWUF-10IHEtron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
S29GL256P11TFIV10Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
