English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR |
| 内存大小: | 256Mb (16M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 700 ps |
| 电压 - 电源: | 2.3V ~ 2.7V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 66-TSSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 66-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MX25L8006EM1J-12GMacronix |
IC FLASH 8MBIT SPI 86MHZ 8SOP |
|
MX25U12835FZ2I-10GMacronix |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
71V67803S150BGRochester Electronics |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
SST25WF080BT-40I/NPRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 40MHZ 8USON |
|
BR24G02FVM-3GTTRROHM Semiconductor |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
IS61QDB41M18A-250M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165LFBGA |
|
S25FL512SAGMFB011Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
71T75902S85BGRochester Electronics |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
71V65703S85BQ8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
24LC01BT-I/LTRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C SC70-5 |
|
R1EX24032ASA00I#S0Rochester Electronics |
EEPROM, 4KX8, SERIAL |
|
CY7C1265KV18-450BZXCCypress Semiconductor |
NO WARRANTY |
|
AS4C4M16SA-7B2CNTRAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 60FBGA |
