English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | FS-S |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 512Mb (64M x 8) |
| 内存接口: | SPI - Quad I/O, QPI |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | 2ms |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 2V |
| 工作温度: | -40°C ~ 105°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 16-SOIC (0.295", 7.50mm Width) |
| 供应商设备包: | 16-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS61WV1288EEBLL-10TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
BR24G02FVM-3AGTTRROHM Semiconductor |
IC EEPROM 2KBIT I2C 1MHZ 8MSOP |
|
BR24G08-3ROHM Semiconductor |
IC EEPROM 8KBIT I2C 1MHZ 8DIP |
|
AT25SF321B-MHB-TAdesto Technologies |
IC FLASH 32MBIT SPI/QUAD 8UDFN |
|
IS62WV20488EBLL-55BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PAR 48MINIBGA |
|
AT25DF041B-MHN-YAdesto Technologies |
IC FLASH 4MBIT SPI 104MHZ 8UDFN |
|
W97AH6KBVX2IWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 134VFBGA |
|
CAT28C65BN-90Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 32PLCC |
|
GS8182Q18BGD-300IGSI Technology |
IC SRAM 18MBIT PARALLEL 165FPBGA |
|
CY7C1325G-100AXCRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
24CW160T-I/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8TSSOP |
|
71T75802S133BGGI8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
25LC160BT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8MSOP |
