English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 4Kb (512 x 8) |
| 内存接口: | SPI |
| 时钟频率: | 10 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 2.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-WFDFN Exposed Pad |
| 供应商设备包: | 8-TDFN (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CYDC064B16-55AXIRochester Electronics |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
24FC16-E/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8TSSOP |
|
S25HL512TFAMHI010Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
BR24T16FVM-WTRROHM Semiconductor |
IC EEPROM 16KBIT I2C 8MSOP |
|
N25Q128A13ESE40EFlip Electronics |
IC FLSH 128MBIT SPI 108MHZ 8SOP2 |
|
IS43R86400D-5TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
24LC08BH-E/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8MSOP |
|
S29GL01GT10GHI010Rochester Electronics |
IC FLASH 1GBIT PARALLEL 56FBGA |
|
IS42S16160J-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
AT24C512C-SHD-TRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 1MHZ 8SOIC |
|
S25FS512SDSBHA213Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
71V67903S80BQ8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
CY7C1019BV33-15ZCRochester Electronics |
STANDARD SRAM, 128KX8 |
