English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, QDR II+ |
| 内存大小: | 72Mb (4M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 600 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BR24S32FVT-WE2ROHM Semiconductor |
IC EEPROM 32KBIT I2C 8TSSOP |
|
25LC160A-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8SOIC |
|
RMWV6416AGSD-5S2#AA0Renesas Electronics America |
IC SRAM 64MBIT PAR 52TSOP II |
|
BR24G16FVJ-3GTE2ROHM Semiconductor |
IC EEPROM 16KBIT I2C 8TSSOP |
|
IS34ML04G084-TLIISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 4GBIT PARALLEL 48TSOP |
|
IS37SML01G1-LLIISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 1GBIT SPI 104MHZ 8WSON |
|
S29GL064N90TFVR23Rochester Electronics |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
MT53E384M32D2DS-053 AIT:E TRMicron Technology |
IC DRAM 12GBIT 1.866GHZ 200WFBGA |
|
71V3558XS133PFGIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
71V424S12YGI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
AS4C8M16SA-6BANTRAlliance Memory, Inc. |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
24VL024/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
CY7C1441KV33-133BZMCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
