English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MoBL® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 2.2V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-SOIC (0.400", 10.16mm Width) |
| 供应商设备包: | 32-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S25FS128SDSMFI1D0Cypress Semiconductor |
IC FLSH 128MBIT SPI/QUAD I/O 8SO |
|
MTFC16GAPALBH-AAT TRMicron Technology |
IC FLASH 128GBIT MMC 153TFBGA |
|
CY7C199-8VCTRochester Electronics |
SRAM CHIP ASYNC SINGLE 5V 256K B |
|
CY62167EV30LL-45BVITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
CY7C09279V-12ACRochester Electronics |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
IS42S16320F-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
MT28EW512ABA1HPC-0SIT TRMicron Technology |
IC FLASH 512MBIT PARALLEL 64LBGA |
|
RM25C128C-LSNI-BAdesto Technologies |
IC CBRAM 128KBIT SPI 10MHZ 8SOIC |
|
24C02CT-E/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
LE25S81MCTWGRochester Electronics |
IC FLASH 8MBIT SPI 40MHZ 8SOIC |
|
CY7C1399-12VCRochester Electronics |
CACHE SRAM, 32KX8, 12NS PDSO28 |
|
FM22L16-55-TGTRCypress Semiconductor |
IC FRAM 4MBIT PARALLEL 44TSOP II |
|
CY7C025E-25AXCFlip Electronics |
IC SRAM 128KBIT PARALLEL 100TQFP |
