类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 100ns |
访问时间: | 100 ns |
电压 - 电源: | 4.75V ~ 5.25V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 34-PowerCap™ Module |
供应商设备包: | 34-PowerCap Module |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V65703S85BGGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
BR24C64-WMN6TPROHM Semiconductor |
IC EEPROM 64KBIT I2C 400KHZ 8SO |
|
STK14C88-NF45Rochester Electronics |
IC NVSRAM 256KBIT PAR 32SOIC |
|
70V3379S4BCRenesas Electronics America |
IC SRAM 576KBIT PAR 256CABGA |
|
CAT24FC256WIRochester Electronics |
IC EEPROM 256KBIT I2C 1MHZ 8SOIC |
|
71V016SA15PHG8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
IS45S16320D-7BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
M24C16-WDW6TPSTMicroelectronics |
IC EEPROM 16KBIT I2C 8TSSOP |
|
93AA66BX-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
MT25QU128ABA8E12-0SIT TRMicron Technology |
IC FLASH 128MBIT SPI 24TPBGA |
|
IS42SM16800H-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
25AA040/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 1MHZ 8DIP |
|
71V546S100PFIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |